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| SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 AUGUST 1995 PARTMARKING DETAILS BCW60A AA BCW60B AB BCW60C AC BCW60D AD COMPLEMENTARY TYPE BCW61 BCW60AR BCW60BR BCW60CR BCW60DR CR DR AR BR BCW60 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PTOT tj:tstg VALUE 32 32 5 200 50 330 -55 to +150 SOT23 UNIT V V V mA mA mW C FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFE Group A Min. h11e h12e h21e h22e 1.6 Typ. 2.7 1.5 200 18 30 Max. 4.5 hFE Group B Min. 2.5 Typ. 3.6 2 260 24 50 Max. 6.0 hFE Group C Min. 3.2 Typ. 4.5 2 330 30 60 Max. 8.5 hFE Group D Min. 4.5 Typ. 7.5 3 520 50 100 S Max. 12 k 10-4 SWITCHING CIRCUIT -VBB VCC(+10V) R2 RL 1sec +10V tr < 5nsec Mark/Space ratio < 0.01 Zs=50 50 R1 tr < 5nsec Zin 100k Oscilloscope PAGE NO BCW60 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current Emitter-Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base - Emitter Voltage SYMBOL V(BR)CEO V(BR)EBO ICES IEBO VCE(sat) VBE(SAT) VBE 0.60 0.70 0.55 0.12 0.20 0.70 0.83 0.52 0.65 0.78 78 170 145 250 220 350 300 500 250 8 4.5 2 6 MIN. 32 5 20 20 20 0.35 0.55 0.85 1.05 0.75 TYP. MAX. UNIT V V nA nA V V V V V V V CONDITIONS. IC=2mA IEBO =1A VCES =32V VCES =32V ,Tamb=150oC VEBO =4V IC=10mA, IB = 0.25mA IC= 50mA, IB =1.25mA IC=10mA, IB=0.25mA IC =50mA, IB=1.25mA IC=10A, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V IC=10A, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V IC=10A, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V IC=10A, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V IC=10A, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V MHz pF pF dB IC =10mA, VCE =5V f = 100MHz VEBO=0.5V, f =1MHz VCBO=10V, f =1MHz IC= 0.2mA, VCE = 5V RG =2K, f=1KH f=200Hz A Static BCW60A Forward Current Transfer BCW60B Ratio BCW60C BCW60D hFE 120 50 20 180 70 40 250 90 100 380 100 220 310 460 630 Transition Frequency Emitter-Base Capacitance Collector-Base Capacitance Noise Figure fT Cebo Ccbo N 125 Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time td tr ton ts tf toff 35 50 85 400 80 480 150 800 ns ns ns ns ns ns IC:IB1:- IB2 =10:1:1mA R1=5K, R2=5K VBB =3.6V, RL=990 *Measured under pulsed conditions. Pulse width=300s. Duty cycle Spice parameter data is available upon request for this device |
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